MPN: MZWLR3T8HBLS-00007·By: Samsung
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The Samsung PM1733 EVT2 (SKU: MZWLR3T8HBLS-00007) is a 3.84TB enterprise NVMe SSD designed for datacenter applications. It utilizes V5 256/512Gb NAND flash memory in a 2.5-inch U.2 form factor, supporting PCIe 4.0 x4 interface with single port x4 lanes or dual port x2 lanes. Performance includes sequential read speeds up to 7000 MB/s, sequential write up to 3800 MB/s, random read IOPS of 1,500,000 (4KB), and random write IOPS of 135,000 (4KB). It offers 1 DWPD endurance over five years, with LBA count of 7,501,476,528 (512-byte). This drive ensures high throughput and low latency for demanding workloads. Compatible with enterprise servers and storage arrays, it supports TCG Opal 2.0 encryption. Ideal for read-intensive tasks in cloud computing, virtualization, and big data analytics, providing reliable capacity and performance optimization.
| Manufacturer part # | MZWLR3T8HBLS-00007 |
|---|---|
| Brand | Samsung |
| Condition | New |
| Model | PM1733 EVT2 |
| Capacity | 3.84TB; LBA Count: 7,501,476,528 (512-byte) |
| Product Line | PM1733 |
| Product Type | Enterprise NVMe Solid State Drive; Internal |
| Compatible Bay | 2.5" |
| Drive Writes Per Day | 1 DWPD |
| Encryption Supported | TCG Opal 2.0 |
No specific system or OS compatibility lists found in sources; standard enterprise NVMe support expected
High-capacity 3.84TB with 1 DWPD endurance suits large-scale data storage needs in enterprise servers.
1,500,000 random read IOPS and 7000 MB/s sequential read enable fast VM access and low-latency operations.
PCIe 4.0 x4 interface delivers 3800 MB/s writes, accelerating data processing in analytics workloads.
Dual-port support and U.2 form factor ensure reliability and compatibility in cloud infrastructure.
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[email protected]| Max Wattage | 22 W |
|---|---|
| Power consumption (idle) | 8.5 W |
| Form Factor | 2.5-inch U.2 |
|---|
| Interface Type | PCIe 4.0 x4 (NVMe); Single port x4 lanes or Dual port x2 lanes |
|---|
| Random Read IOPS | 1,500,000 (4KB) |
|---|---|
| Random Write IOPS | 135,000 (4KB) |
| Sequential Read Speed | 7000 MB/s |
| Sequential Write Speed | 3800 MB/s |
| Media Type | V5 256/512Gb NAND Flash Memory |
|---|
| Depth | 69 mm |
|---|---|
| Width | 100 mm |
| Height | 15 mm |
The Samsung PM1733 EVT2 offers 3.84TB capacity with 7,501,476,528 LBA (512-byte), using V5 256/512Gb NAND flash. This enables handling of large datasets in enterprise environments with high density and efficiency.
Sequential read reaches 7000 MB/s, write 3800 MB/s. Random read delivers 1,500,000 IOPS (4KB), write 135,000 IOPS (4KB), powered by PCIe 4.0 x4 NVMe for superior datacenter throughput.
It features PCIe 4.0 x4 NVMe interface with single port x4 lanes or dual port x2 lanes. This configuration supports high availability and flexibility in server and storage array deployments.
Rated at 1 DWPD over five years, ensuring reliable performance for mixed workloads in 24/7 datacenter operations with V-NAND durability.
2.5-inch U.2 form factor with dimensions 69 x 100 x 15 mm, compatible with standard enterprise racks and hot-swap bays for easy integration.
Yes, supports dual port x2 lanes alongside single x4, ideal for all-flash arrays requiring redundancy and failover in critical infrastructure.
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